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초록보기

This paper introduces a 77-81 GHz CMOS low-noise amplifier (LNA) designed for FMCW radar applications, with the goal of achieving high gain and low noise figure. To attain these objectives, a two-stage differential common-source (CS) structure is adopted, and neutralization capacitors are employed in each stage to obtain high gain. The proposed LNA is implemented in bulk CMOS 65nm process, providing a gain of over 17 dB and a noise figure of less than 4.5 dB in the frequency range of 77-81 GHz. The chip size, including pads, is 0.69 𝛍m × 0.39 𝛍m.

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권호기사 목록 테이블로 기사명, 저자명, 페이지, 원문, 기사목차 순으로 되어있습니다.
기사명 저자명 페이지 원문 목차
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(An) 8G Hz SST transmitter with adjustable FIR and pre-emphasis logic in 65nm CMOS Zhang Yidan, Tae wook Kim p. [1-6]

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(A) proposal of methodologies for implementing digital chips in the latest processes Hye-Seung Sun, In-Shin Cho p. [1-7]