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Title Page
Contents
Abstract 12
Chapter 1. Introduction 16
1.1. Overview of the AlGaInP material 16
1.2. AlGaInP LEDs: researches, developments, and applications 19
Reference (for Chapter 1) 26
Chapter 2. Experimental equipment and techniques 29
2.1. MOCVD system 29
2.2. Analytical Equipment 43
2.2.1. High resolution X-ray diffraction(HRXRD) 43
2.2.2. Photoluminescence(PL) spectroscopy 46
2.2.3. Scanning electron microscopy(SEM) 52
2.2.4. Atomic force microscopy(AFM) 57
References (for Chapter 2) 62
Chapter 3. Efficiency Improvement of 590 nm AlGaInP Light Emitting Diode with a Reflective Top Electrode 63
3.1. Introduction 63
3.2. Experimental Procedure 64
3.3. Results and Discussion 67
3.4. Summary 73
References (for Chapter 3) 74
Chapter 4. Air-Hybrid Distributed Bragg Reflector Structure for Improving Light Output Power in AlGaInP-Based LEDs 77
4.1. Introduction 77
4.2. Experimental Procedure 78
4.3. Results and Discussion 79
4.4. Summary 90
References (for Chapter 4) 91
Chapter 5. Reduction of surface defects on the Gap window layer of 630 nm AlGaInP LED using post Zn-diffusion process. 92
5.1. Introduction 92
5.2. Experimental Procedure 93
5.3. Results and Discussion 96
5.4. Summary 106
References (for Chapter 5) 107
Chapter 6. Conclusions 110
Curriculum vitae 112
요약(국문초록) 115
Fig. 1.1. Bandgap energy and corresponding wavelength versus lattice... 18
Fig. 1.2. Current distribution and light-generating region in an AlGaInP... 21
Fig. 1.3. Schematic fabrication process for wafer-bonded transparent... 23
Fig. 1.4. Dependence of the total optical output power on the drive current... 24
Fig. 2.1. The schematic diagram of the MOCVD system for AlGaInP... 32
Fig. 2.2. Main machine interface of the CACE system on MOCVD system 34
Fig. 2.3. Schematic diagram of the reactor chamber and the progress of... 35
Fig. 2.4. Schematic diagram of the dual supply system. 36
Fig. 2.5. Schematic diagram of the MO source bubbler. 38
Fig. 2.6. Diagram of the EPI-TT system used for MOCVD 40
Fig. 2.7. Graphical results of the normal data analyzed by EPI-TT system for... 41
Fig. 2.8. Graphical results of the data analyzed by EPI-TT system without Al... 41
Fig. 2.9. PANalytical X'Pert Pro XRD used in measurement of crystalline... 45
Fig. 2.10. Energy band diagram for an excitation photon and luminescence... 50
Fig. 2.11. Schematic diagram of photoluminescence spectroscopy. 51
Fig. 2.12. Schematic drawing of the Scanning electron microscope. 55
Fig. 2.13. Hitachi S-4700 SEM used in measurement of image for the... 56
Fig. 2.14. Schematic diagram of an atomic force microscope 60
Fig. 2.15. Schematic diagram of the force-distance curve characteristic of the... 61
Fig. 3.1. Schematics of structures of (a) conventional AlGaInP LED and (b)... 66
Fig. 3.2. Photo-luminescence measurement of AlGaInP LED epi-wafer with... 68
Fig. 3.3. (a) Light emitting path on lights emitted upwardly from... 70
Fig. 3.4. (a) Comparison of the L-I-V characteristic curves of the... 72
Fig. 4.1. Schematic of layer sequences of LEDs and conceptual path reflected... 81
Fig. 4.2. Angle-dependent reflectivity of DBR and air gap structures... 82
Fig. 4.3. Cross-sectional SEM images of (a) conventional DBR and (b)... 84
Fig. 4.4. Forward I-V characteristics plotted on a log-log scale of LEDs... 85
Fig. 4.5. Light output power versus current curve for LEDs having DBR... 87
Fig. 4.6. Measurement of the angular radiation pattern for devices having... 89
Fig. 5.1. Schematic Structures of 630 nm AlGaInP LED with the Gap... 95
Fig. 5.2. AFM images on the surface of GaP window layer fabricated with 3... 97
Fig. 5.3. XRD rocking curves in 630 nm AlGaInP LED with the GaP window... 98
Fig. 5.4. Resistance and hole concentrations measurement of the GaP... 100
Fig. 5.5. Doping concentrations in the Gap windows as measured by the... 102
Fig. 5.6. Emission spectra of 630 nm AlGaInP LED with GaP window... 104
Fig. 5.7. Light output power and current-voltage curves of 630 nm AlGaInP... 105
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