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국회도서관 홈으로 정보검색 소장정보 검색

초록보기

In this paper, a wideband gm-boosted up-conversion mixer is presented, which is fabricated in 28-nm bulk CMOS process. It adopts a double-balanced structure for high isolation characteristics. The circuit employs a current bleeding path through PMOS to enhance the gm, resulting in a high conversion gain. The feedback resistor R enables impedance matching without an additional impedance matching network while providing wideband characteristics in the baseband. Furthermore, the symmetrical layout of the switching stage cells improves the LO to RF isolation performance. The measured peak conversion gain is 3.2 dB, and the 3-dB frequency bandwidth is more than 6 GHz. The power consumption is 6.38 mW at 1.1 V supply voltage. The chip size, including the pads, is 0.53 x 0.42 mm² and the core area is 0.2 x 0.26 mm².

권호기사

권호기사 목록 테이블로 기사명, 저자명, 페이지, 원문, 기사목차 순으로 되어있습니다.
기사명 저자명 페이지 원문 목차
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