표제지

목차

초록 8

Abstract 9

제1장 서론 11

제2장 이론적 배경 13

2.1. 저항 변화 메모리의 동작 13

2.2. 저항 변화 메모리의 스위칭 메커니즘 16

제3장 실험 방법 18

3.1. 원자층 증착법을 이용한 산화 하프늄 증착 18

3.2. 산화 하프늄 박막 분석 방법 20

3.3. 저항 변화 메모리 소자 제작 및 측정 방법 21

제4장 결과 및 고찰 24

4.1. H₂O 기반 HfOₓ 박막의 특성 24

4.2. H₂O 기반 HfOₓ ReRAM의 전기적 특성 28

4.3. C:H₂O₂ 기반 HfOₓ 박막의 특성 30

4.4. C:H₂O₂ 기반 HfOₓ ReRAM의 전기적 특성 34

4.5. C:H₂O₂ 기반 HfOₓ ReRAM의 열처리 및 스케일링 효과 36

제5장 결론 40

제6장 참고문헌 41

Fig. 2.1. (a) Schematic of the device structure, (b) operation [20], (c) unipolar switching, and (d) bipolar switching of the ReRAM 15

Fig. 2.2. (a) Filament formation and rupture for the ReRAM switching; Filament types (b) OxRAM and (c) CBRAM 17

Fig. 3.1. (a) Molecular structure of TDMA-Hf; (b) ALD cycle for HfOₓ deposition using TDMA-Hf and H₂O₂ 19

Fig. 3.2. ReRAM fabrication flow: (a) Ti/Pt sputtering for BE (b) HfOₓ deposition using ALD (c) Ru sputtering and patterning for TE and (d) OM image of the... 23

Fig. 4.1. XRR spectra of H₂O-based HfOₓ deposited at (a) 150℃, (b) 200℃ and (c) 250℃ 26

Fig. 4.2. XPS spectra of (a) Hf 4f, (b) O 1s, and (c) C 1s for H₂O-based HfOₓ deposited at 150℃; (d) Composition of HfOₓ films deposited at 150℃, 200℃ and 250℃ 27

Fig. 4.3. (a) Measurement schematic of the fabricated ReRAM devices; I - V curves of ReRAM using H₂O-based HfOₓ deposited at (b) 150℃, (c) 200℃ and (d) 250℃ 29

Fig. 4.4. XRR spectra of C:H₂O₂-based HfOₓ deposited at (a) 150℃, (b) 200℃ and (c) 250℃ 32

Fig. 4.5. XPS spectra of (a) Hf 4f, (b) O 1s, and (c) C 1s for C:H₂O₂-based HfOₓ deposited at 150℃; (d) Composition of HfOₓ films deposited at 150℃, 200℃ and 250℃ 33

Fig. 4.6. (a) Measurement schematic of the fabricated ReRAM devices; I - V curves of ReRAM using C:H₂O₂-based HfOₓ deposited at (b) 150℃, (c) 200℃ and... 35

Fig. 4.7. I - V curves of (a) H₂O-based HfOₓ ReRAM annealed at 450℃ and C:H₂O₂-based HfOₓ ReRAM annealed at (b) 350℃, (c) 450℃ and (d) 550℃ 38

Fig. 4.8. I - V curves of (a) 25nm and (b) 10nm-thickness C:H₂O₂-based HfOₓ ReRAM annealed at 450℃; (c) Non-polar switching of 10nm-thickness C:H₂O₂-... 39