Title Page
Abstract
Contents
Chapter 1. Introduction 13
1.1. Introduction of 2D Materials 13
1.1.1. Atomic Structure of 2D Materials 13
1.1.2. Electronic Properties of 2D Materials 15
1.2. Introduction of Transition Metal Dichalcogenides 17
1.2.1. Transition Metal Dichalcogenides (TMDs) 17
1.2.2. Electrical Properties of TMDs 18
1.3. Key Factors of 2D Materials for Multi-functional Electronic Applications 22
1.3.1. van der Waals (vdWs) Heterostructure 22
1.3.2. Effective Electrostatic Controllability 25
1.3.3. Efficient Polarity Modulation 28
1.4. Purpose of Research 31
Chapter 2. Highly Efficient WSe₂ Light-emitting Transistor 32
2.1. Introduction 32
2.2. Experiment Section 34
2.2.1. Device Fabrication Process 34
2.2.2. Material Characterizations 34
2.2.3. Electrical and Optoelectrical Measurements 35
2.2.4. Electrostatic Simulation for EL of Electrically Confined Neutral Exciton in WSe₂. 35
2.3. Result and Discussion 36
2.3.1. Device Structure and Fabrication Process 36
2.3.2. Reconfigurable Electrical Characteristics 40
2.3.3. Light Emission 43
2.3.4. Electrical Tunability of Electroluminescence 45
2.3.5. Electroluminescence of Electrically Confined Neutral Exciton 48
2.4. Conclusion 51
Chapter 3. Reconfigurable 2D Memory for Logic-in-memory 52
3.1. Introduction 52
3.2. Experiment Section 53
3.2.1. Device Fabrication Process and Material Characterizations 53
3.2.2. Electrical Measurements 54
3.3. Result and Discussion 54
3.3.1. Highly Integrated Logic-in-memory Circuit based on WSe₂ FG-FETs 54
3.3.2. Ambipolar Memory Characteristics 57
3.3.3. Reconfigurable Electrical Switching Characteristics 59
3.3.4. Programmable Inverter based on WSe₂ FG-FETs 61
3.3.5. Programmable Logic-in-memory Circuits for 16 Boolean Logic Functions 63
3.3.6. Reconfigurable and Cascadable Logic-in-memory Processor 66
3.4. Conclusion 68
Chapter 4. Irreversible Conductive Filament Contact for Passivated vdWs Heterostructure 69
4.1. Introduction 69
4.2. Experiment Section 70
4.2.1. Device Fabrication Process 70
4.2.2. TEM Observation 71
4.2.3. Electrical Measurements 71
4.3. Result and Discussion 71
4.3.1. Mechanism of Irreversible Conductive Filaments (ICFs) 71
4.3.2. Device Geometry and Fabrication Processes 74
4.3.3. ICFs Formation using Electrical Processes. 76
4.3.4. Atomic Structure of ICFs 78
4.3.5. Irreversibility and Effective ICFs Contact 80
4.3.6. Electrical Characteristics of the FET with ICFs Contact 82
4.3.7. Universality of ICFs Contact 84
4.4. Conclusion 86
Chapter 5. Conclusion 87
Chapter 6. Reference 90
Abstract in Korean 101