Title Page
Abstract
Contents
Chapter 1. Introduction 12
1.1. Resistive random access memory based on organometal halide perovskites materials 12
1.2. Resistive switching mechanism in organometal halide perovskite materials related to conducting filaments 13
References 17
Chapter 2. Fabrication and characterization of high-performance MAPbI₃ resistive memory in a cross-bar array 19
2.1. Introduction 19
2.2. Experiments 21
2.2.1. Device fabrication 21
2.2.2. Electrical characterization. 23
2.3. Results and discussion 24
2.3.1. Electrical characteristics of single perovskite memory device 24
2.3.2. Electrical characteristics of the 8×8 cross-bar array 27
2.3.3. Compatibility with the 1diode-1resistor (1D-1R) scheme 30
2.4. Conclusion 35
References 36
Chapter 3. Characterization of percolative conducting filaments in organometal perovskite RRAM using current noise analysis 38
3.1. Introduction 38
3.2. Experiments 40
3.2.1. Device fabrication 40
3.2.2. Device characterization 41
3.2.3. Thermal simulation 42
3.3. Results and discussion 44
3.3.1. Noise scaling in various resistance states 44
3.3.2. Temperature-dependent characteristics of conducting filaments 48
3.3.3. Current time trace measured at 275 K 52
3.4. Conclusion 58
References 59
Chapter 4. Summary 62
국문초록 64
Chapter 3. 8
Table 3.1. Parameters k, Cₚ, and ρ for various materials used for the simulation. 43
Chapter 2. 9
Figure 2.1. A schematic image of the fabrication process for MAPbI₃ memory devices. 21
Figure 2.2. (a) A cross-sectional SEM image of the Au/MAPbI₃ /Au on a SiO₂ /Si substrate. (b) The top surface SEM image of a MAPbI₃ film. (c) XRD spectra of... 22
Figure 2.3. (a) Representative I-V curve of a unipolar Au/MAPbI₃ /Au device. (b) The ON/OFF ratio as a function of voltage. (c) The electrical... 25
Figure 2.4. The color map plots of the resistance distribution of the 64 memory cells in the (a) LRS (b) and HRS. The gray cells indicate short-... 28
Figure 2.5. The color map plots of the resistance distribution of the 64 memory cells in the best-yield device (a) LRS (b) and HRS. The gray cells... 29
Figure 2.6. (a) The I-V curve of the external diode used for the 1D-1R scheme. (b) A typical I-V curve of the unipolar perovskite memory used for the 1D-1R scheme. (c)... 33
Figure 2.7. The cross-talk measurement configuration with labels shown in red. R1, R2, R3, and R4 represent (1,1), (1,2), (2,2) and (2,1) cells, respectively, from Figures... 34
Chapter 3. 10
Figure 3.1. Experimental setup for (a) noise spectra measurement and (b) current time trace measurement. 41
Figure 3.2. Simulation setup for the MAPbI₃ memory. 43
Figure 3.3. (a) I-V curves of a perovskite RRAM showing LRS and various IRSs. (b) Spectral noise power density versus frequency for four resistance states showing... 47
Figure 3.4. (a) Normalized current noise power spectral density versus the resistance of a perovskite resistive memory device at 275 and 323 K. (b) Reset current versus... 49
Figure 3.5. (a) Current time trace for various resistance states measured at 275 K and (b) corresponding current histogram for 0.1s. RTN is exhibited in IRSs. Common... 53
Figure 3.6. Time lag plot for (a) 250 Ω state (average) and (b) 830 Ω state (average) at 275 K. Corresponding current peak in the histogram is also denoted in the current... 57
Figure 3.7. (a) Current time trace for various resistance states measured at 323 K and (b) corresponding current histogram for 0.1s. (c) Schematic representation of... 57