표제지
목차
Abstract 10
Ⅰ. 서론 13
Ⅱ. 이론 15
1. 유기 시냅스 트랜지스터 (Organic Synaptic Transistors) 15
2. 유기-강유전성 전계효과 트랜지스터(OFeFETs) 18
3. 이중결합 포함 PVDF 계열 불소계 강유전성 고분자 20
4. MIM(Metal-Insulator-Metal) 24
5. 유기 전계 효과 트랜지스터 (OFETs) 25
Ⅲ. 실험 및 측정 28
1. 실험 재료 28
가. PDVT-10 28
나. PNDI-2T 29
다. DPVDF (16, 52, 96) 30
2. 실험 방법 32
가. MIM 제작 32
나. OFETs 제작(1) - TGBC 34
다. OFETs 제작(2) - BGTC 37
라. OFETs 제작(3) - double gate 38
마. 절연층 패터닝 42
3. 측정 방법 44
가. LCR-Meter & Alpha Step 44
나. Keithley 4200 반도체 특성 분석 장비 44
다. Fourier Transform Infarared Spectroscopy (FT-IR) 45
라. X-ray Difrration (XRD) 47
Ⅳ. 결과 및 고찰 48
1. 유전체 고유 특성 평가 48
가. 주파수 별 캐패시턴스 49
나. 두께 측정 및 유전상수 도출 51
2. 트랜지스터의 강유전성 및 전기적 특성 평가 54
가. transfer / output curve 56
나. hysteresis curve 66
다. XRD 68
3. 절연체 패터닝 평가 69
가. UV / thermal crosslinking 69
나. 크로스링커 첨가 71
Ⅴ. 결론 78
참고문헌 81
Table 1. DPVDF (16, 52, 96) Capacitance according to temperature 50
Table 2. Thickness of DPVDF (16, 52, 96) 51
Table 3. Dielectric Constant of group of DPVDF 51
Table 4. key parameters of TGBC structure(p-type) 59
Table 5. key parameters of TGBC structure(n-type) 61
Table 6. key parameters of BGTC structure(p-type) 65
Figure 1. The framework of the review about organic synaptic devices and their application. 16
Figure 2. Dielectric Materials of Synaptic Transistors 17
Figure 3. The chain conformation of the most phases in PVDF 20
Figure 4. Applications of ferroelectric polymer in flexible electronics 21
Figure 5. Chemical structure and ferroelectric effect 21
Figure 6. Chemical structure of DPVDF 22
Figure 7. Chemical Mechanism of DPVDF 22
Figure 8. crosslinking reaction of DPVDF chain 23
Figure 9. MIM(Metal-Insulator-Metal) structure and Capacitance equation 24
Figure 10. Structural classification of OFETs 26
Figure 11. Molecular structure of PDVT-10 28
Figure 12. Molecular structure of PNDI-2T 29
Figure 13. Chemical structure and mechanism of group of DPVDF 30
Figure 14. Intensity and absorbance of DPVDF according to the double bond 31
Figure 15. differences between theoretical Mw and practical Mw 31
Figure 16. Top view of MIM(Metal-Insulator-Metal) structure and front view of MIM stucture 33
Figure 17. OFETs TGBC structure fabrication mechanism 36
Figure 18. OFETs BGTC structure fabrication mechanism 38
Figure 19. double gate structure of OFETs 40
Figure 20. Mask Design for Double Gate 41
Figure 21. Bragg's law 47
Figure 22. DPVDF (16, 52, 96) Capacitance according to temperature 49
Figure 23. Dielectric constant by frequency at (a)50℃, (b)100℃, (c)150℃ 53
Figure 24. TGBC p-type devices' transfer and output curve at 50℃ 56
Figure 25. TGBC p-type devices' transfer and output curve at 100℃ 57
Figure 26. TGBC p-type devices' transfer and output curve at 150℃ 58
Figure 27. TGBC n-type devices' transfer and output curve at 50℃ 60
Figure 28. BGTC p-type devices' transfer and output curve at 50℃ 62
Figure 29. BGTC p-type devices' transfer and output curve at 100℃ 63
Figure 30. BGTC p-type devices' transfer and output curve at 150℃ 64
Figure 31. hysteresis curve of PVDF-CTFE & DPVDF 16, 52, 96 at TGBC 66
Figure 32. (c)~(f) annealed at 50 degrees, (g)~(j) annealed at 150 degrees. 67
Figure 33. XRD data of fluorinated polymers 68
Figure 34. wavenumbers - normalized absorbance at DPVDF's film state 69
Figure 35. UV crosslinking data with FT-IR 70
Figure 36. thermal crosslinking data with FT-IR 70
Figure 37. add crosslinker to PVDF-CTFE 72
Figure 38. add crosslinker to DPVDF 16 73
Figure 39. add crosslinker to DPVDF 52 74
Figure 40. add crosslinker to DPVDF 96 75
Figure 41. UV exposure for patterning the dielectric 76
Figure 42. the result of UV exposure patterning test 77
Figure 43. the result of UV exposure patterning test with crosslinker 77