표제지
목차
국문요약 10
Abstract 11
1. 서론 13
2. 이론적 배경 15
2.1. 탄소 재료의 Raman 분광법 15
2.2. 열전도도 측정 16
3. 실험방법 17
4. 실험결과 및 고찰 19
4.1. 시편의 미세조직 관찰 19
4.2. 결합구조 및 결정성 분석 32
4.3. 열처리에 따른 미세조직 변화 38
4.4. 마이크로파 및 이온빔 조사에 따른 미세조직 변화 48
5. 결론 52
6. 참고문헌 54
Table 1. Sputtering process conditions. 17
Table 2. I(D)/I(G) and G band positions along the sputtering conditions. 36
Table 3. Thermal conductivities before or after annealing. 42
Fig. 1. Schematic of roll-to-roll sputter. 20
Fig. 2. Schematic of specimen and observation direction. 20
Fig. 3. TEM cross-section image of GL sputtered under carbon power 6kW and line speed (a) 1.2m/min. (b) 2.0m/min. 22
Fig. 4. TEM cross-section image of GL sputtered under carbon power 8kW and line speed (a) 1.2m/min. (b) 2.0m/min. 23
Fig. 5. TEM cross-section image of GL sputtered under carbon power 10kW and line speed (a) 1.2m/min. (b) 2.0m/min. 24
Fig. 6. Average thickness of sputtered layer of GL specimens under different line speed along carbon sputtering power. 25
Fig. 7. (a) STEM cross-section image and (b) EDS map of GL specimen. 25
Fig. 8. HRTEM image with XPS depth profile graph of GL specimen. 26
Fig. 9. (a) XPS Al depth profile of GL specimen and binding energy at etch time (b) 1600s, (c) 900s. 27
Fig. 10. (a) XPS Ni depth profile of GL specimen and (b) binding energy at etch time 660s. 28
Fig. 11. (a) XPS Cr depth profile of GL specimen and (b) binding energy at etch time 680s. 29
Fig. 12. (a) XPS C depth profile of GL specimen and binding energy at etch time (b) 60s, (c) 460s. 31
Fig. 13. Raman spectrum of GL sputtered under carbon power 6kW and line speed (a) 1.2m/min. (b) 2.0m/min. 33
Fig. 14. Raman spectrum of GL sputtered under carbon power 8kW and line speed (a) 1.2m/min. (b) 2.0m/min. 34
Fig. 15. Raman spectrum of GL sputtered under carbon power 10kW and line speed (a) 1.2m/min. (b) 2.0m/min. 35
Fig. 16. HRTEM image of GL sputtered under carbon power 8kW and line speed 1.2m/min. 36
Fig. 17. FFT pattern of fig. 16. 37
Fig. 18. HRTEM image (a) with or (b) without XPS depth profile of GL specimen annealed at 400℃ for 1.5h. 39
Fig. 19. HRTEM image (a) with or (b) without XPS depth profile of GL specimen annealed at 400℃ for 3h. 40
Fig. 20. Raman spectrum of GL specimen annealed at 400℃ for (a) 1.5h, (b) 3h. 41
Fig. 21. (a) XPS Al depth profile of GL specimen annealed for 1.5h and binding energy at etch time (b) 1900s, (c) 1220s. 43
Fig. 22. (a) XPS Ni depth profile of GL specimen annealed for 1.5h and (b) binding energy at etch time 980s. 44
Fig. 23. (a) XPS Cr depth profile of GL specimen annealed for 1.5h and (b) binding energy at etch time 1020s. 45
Fig. 24. (a) XPS C depth profile of GL specimen annealed for 1.5h and binding energy at etch time (b) 60s, (c) 620s. 47
Fig. 25. HRTEM and FFT patterns of each selected area of GL specimen annealed for 1.5h. 47
Fig. 26. Raman spectrum of GL specimens before and after micro wave irradiation under power 700W for 20s or 60s. 49
Fig. 27. Raman spectrum of GL specimens at each position after Ar ion beam implantation for 60s. 49
Fig. 28. Raman spectrum of GL specimens at each position after C ion beam implantation for 60s. 50
Fig. 29. Raman spectrum of GL specimens at each position after Ar and C ion beam implantation sequentially for 60s. 51