Title Page
요약
Abstract
Contents
1. INTRODUCTION 11
2. THEORETICAL BACKGROUND 13
2.1. Definition and classification of etching 13
2.1.1. Wet etching 13
2.1.2. Dry etching 15
2.2. Dry etcher 18
2.2.1. Basic structure of dry etching equipment 18
2.2.2. Types and Methods of Dry Etching 20
3. EXPERIMENTAL 25
4. RESULTS AND DISCUSSION 28
5. CONCLUSIONS 41
6. REFERENCES 43
Figure 1. Schematic view of etch profile (a) isotropic etching (b) anisotropic etching. 14
Figure 2. Dry etching mechanism. 17
Figure 3. Classification of dry etching according to plasma type. 20
Figure 4. Schematic diagram of plasma etching system. 21
Figure 5. Schematic diagram of reactive ion etching system. 22
Figure 6. Schematic diagram of inductively coupled plasma etching system. 24
Figure 7. Sequence of Cu thin films etching 25
Figure 8. Schematic of ICP-RIE 26
Figure 9. (a) Etch rates of copper thin films and SiO₂ hard mask, and etch selectivities of copper films to SiO₂ as a function of EDA concentration in EDA/Ar gas. FESEM... 28
Figure 10. (a) Etch rates of copper thin films and SiO₂ hard mask, and etch selectivities of copper films to SiO₂ as a function of EDA/HFIP concentration in EDA/HFIP/Ar gas... 29
Figure 11. (a) Etch rates of copper thin films and SiO₂ hard mask, and etch selectivities of copper films to SiO₂ as a function of EDA/HFIP concentration in EDA/HFIP/Ar gas... 30
Figure 12. (a) Etch rates of copper thin films and SiO₂ hard mask, and etch selectivities of copper films to SiO₂ as a function of ICP rf power. FESEM micrographs of copper films... 31
Figure 13. (a) Etch rates of copper thin films and SiO₂ hard mask, and etch selectivities of copper films to SiO₂ as a function of dc-bias voltage to substrate. FESEM micrographs of... 33
Figure 14. (a) Etch rates of copper thin films and SiO₂ hard mask, and etch selectivities of copper films to SiO₂ as a function of process pressure. FESEM micrographs of copper... 34
Figure 15. OES analysis of plasmas for the variation of the gas concentration in (a) EDA/Ar gas, (b) EDA/HFIP/Ar gas (EDA to HFIP ratio of 4:1), and (c) EDA/HFIP/Ar gas... 35
Figure 16. XPS narrow scan spectra of (a) Cu 2p, (b) C 1s, and (c) N 1s of the as-deposited copper thin films and copper thin films etched in EDA/Ar and... 37
Figure 17. FESEM micrographs of Cu films etched in 75% EDA/HFIP/Ar followed by the removal of SiO₂ hard mask using wet treatment. Etch conditions: (a) 500 W ICP rf power,... 40