생몰정보
소속
직위
직업
활동분야
주기
서지
국회도서관 서비스 이용에 대한 안내를 해드립니다.
검색결과 (전체 1건)
원문 있는 자료 (1) 열기
원문 아이콘이 없는 경우 국회도서관 방문 시 책자로 이용 가능
목차보기더보기
Title Page
Contents
Abstract 8
Introduction 9
Results and discussion 14
1. Fabrication of 10%Li-ZnO/ZnO thin film 14
1.1. Preparation of solution 14
1.2. Cleaning substrate 14
1.3. Spin-coating 15
1.4. Top electrode deposition 15
2. Sample Characterization 17
2.1. X-Ray Diffraction (XRD) measurement 17
2.2. Current-Voltage measurement (I-V) 19
2.3. X-ray photoelectron spectroscopy (XPS) measurement and analysis 22
2.4. Capacitance - Volatge (C-V) measurement and analysis 27
2.5. Atomic force microscopic (AFM) measurement and analysis 27
3. Performance evaluation 29
Conclusion 31
Reference 32
Figure 1. XRD patterns of 10%Li-ZnO, ZnO and the Pt substrate, respectively. Inset... 18
Figure 2. (a)The rectifying behavior of 5 consecutive cycles of the Au/LZO/ZnO/Pt... 20
Figure 3. (a) the resistive switching behavior of 5 consecutive cycles of the... 22
Figure 4. The XPS spectras of samples. The O1s core levels spectra of ZnO (a) and... 24
Figure 5. Schematic of the Schottky barrier of ZnO/Pt interface before (a) and after (b)... 26
Figure 6. (a) The I-V curves of the as grown case and the without negative scan case.... 27
Figure 7. The linear (a) and log scale (b) curves of the C-V measurement. 27
Figure 8. AFM measurement of the Au/LZO/ZnO/Pt structure. 29
Figure 9. The performance of the Au/LZO/ZnO/Pt structure. 30
초록보기 더보기
The ZnO-based homojunction has been intensively investigated for the excellent potential for various device applications. However these homojunctions have been suffering the low rectification ratio, high turn on voltage and instability problem, which undermined its practical applications. In this study the Li:ZnO/ZnO homojunction was fabricated by chemical solution deposition. The Au/Li:ZnO/ZnO/Pt structure exhibits excellent diode effect with a rectification ratio more than 106, a turn on voltage less than 1.5V, and the time-dependent instability more than 120 days. Additionally, it shows a noticeable resistive switching behavior with a resistive ratio more than 10⁴. The underlying mechanism of the diode effect and resistive switching is attributed to the Li ion transport between the Li:ZnO layer and pure ZnO layer and the interconversion between P-type substitutional Li-Zn and n-type interstitial Li+i. Li exists mostly as the Li-Zn-Li+i complex pairs in the Li:ZnO layer, while dissociated under positive bias from the top Au electrode, and the the interstitial Li+i will transport to the beneath ZnO layer while the substitutional Li-Zn will be left in the Li:ZnO layer, thereby forming a p-n junction and the device will be turned to ON state when the forward current increases abruptly. When the positive bias decreases to zero, the backward current is much greater than the forward one, generating a large resistive switching. The combination of diode effect and resistance switching in the Au/Li:ZnO/ZnO/Pt makes it promissing to meet the desire to build the one diode-one resistor (1D1R) cell to realize the particular demand for future high-density stackable nonvolatile memory applications.
원문구축 및 2018년 이후 자료는 524호에서 직접 열람하십시요.
도서위치안내: / 서가번호:
우편복사 목록담기를 완료하였습니다.
* 표시는 필수사항 입니다.
* 주의: 국회도서관 이용자 모두에게 공유서재로 서비스 됩니다.
저장 되었습니다.
로그인을 하시려면 아이디와 비밀번호를 입력해주세요. 모바일 간편 열람증으로 입실한 경우 회원가입을 해야합니다.
공용 PC이므로 한번 더 로그인 해 주시기 바랍니다.
아이디 또는 비밀번호를 확인해주세요