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제1장 서론 13
1.1. 연구 배경 13
1.2. 문헌조사 15
1.2.1. 가속도 센서의 작동원리와 특징 15
1.2.2. 압저항형 실리콘 고충격 가속도 센서의 연구동향 16
1.3. 연구목표 18
제2장 압저항형 실리콘 가속도 센서의 기본개념 27
2.1. 압저항 효과 27
2.2. 압저항형 실리콘 가속도 센서의 특성 31
2.3. 실리콘 압저항 가속도 센서의 작동 원리 33
제3장 가속도 센서의 설계 45
3.1. 고충격 가속도 센서의 형상 45
3.2. 고충격 가속도 센서의 작동 원리 46
3.3. 최적 설계 48
3.4. 압저항체의 설계 및 제작 조건 53
3.5. 압저항체의 이론 저항 55
제4장 공정 설계 71
4.1. 브릿지형 압저항체 제작 조건 71
4.2. 금속 패턴 형성 및 열처리 공정 조건 설정 74
제5장 고충격 가속도 센서의 제작 82
5.1. 포토마스크 설계 82
5.2. 가속도센서칩 제작공정 82
5.3. 가속도 센서칩 제작결과 84
5.4. 가속도 센서칩 패키징 84
제6장 성능 평가 및 고찰 102
6.1. 가속도 센서 성능 평가 방법 102
6.2. 가속도 센서 성능 평가 결과 103
제7장 결론 118
참고문헌 119
Abstract 126
이력서 128
Table 1.1. Strain sensitivities of the accelerometers with respect to the operation principle. 20
Table 2.1. Gauge factor with respect to the type of strain gauge. 38
Table 3.1. Mobility in silicon with respect to the boron doping concentration. 59
Table 5.1. SOI wafer specification. 87
Table 6.1. Measured resistances and sensitivities of the fabricated accelerometers. 107
Table 6.2. Measured sensitivities with respect to the applied shock 108
Figure 1.1. Sample application of a high-shock silicon accelerometer, which is the core element of the fuze of a penetration weapon. 21
Figure 1.2. Operation mechanisms of the capacitive accelerometer a) when no external force is applied, and b) when an external force is applied. 22
Figure 1.3. Operation mechanisms of the piezoelectric accelerometer a) when no external force is applied, and b) when an external force is applied. 23
Figure 1.4. Zero-shift phenomenon of the piezoelectric accelerometer. 24
Figure 1.5. Operation mechanisms of the piezoresistive accelerometer a) when no external force is applied, and b) when an external force is applied. 25
Figure 1.6. Two types of piezoresistive accelerometers with bridge-type piezoresistor 26
Figure 2.1. Room-temperature piezoresistance coefficients in the (110) plane of Si with respect to the dopant (10-12 ㎠ /dyne) p-type Si.(이미지참조) 39
Figure 2.2. Room-temperature piezoresistance coefficients in the (110) plane of Si with respect to the dopant (10-12 ㎠ /dyne) n-type Si.(이미지참조) 40
Figure 2.3. Variation of the diffused layer resistance with the temperature for n-type layers. The values of the resistances are normalized by the resistance at 0℃. 41
Figure 2.4. Temperature coefficient of resistivity as a function of dopant concentration. 42
Figure 2.5. Piezoresistance factor P(N,T) as a function of the impurity concentration (N) and temperature (T) for p-Si 43
Figure 2.6. Wheatstone bridge circuit 44
Figure 3.1. 3D view of the proposed accelerometer 60
Figure 3.2. Operation mechanism of the proposed accelerometer. 61
Figure 3.3. Wheatstone bridge circuit consisting of four resistors (when the mass moves downward as shown in Fig. 3.2, R₁ and R₄ are elongated while R₂ and R₃ are shortened;... 62
Figure 3.4. Mesh shape for optimal design 63
Figure 3.5. Simulation of the optimally designed structure under 2000 g downward acceleration 64
Figure 3.6. Natural frequencies and their modes 65
Figure 3.7. Projected ranges of Rp and the standard deviation △ Rp for implantation of boron in Si, SiO₂ , Si₃N₄, and Al.(이미지참조) 66
Figure 3.8. Temperature dependence of the diffusivities (at low concentrations) of commonly used dopant impurities in silicon. 67
Figure 3.9. Schematic of the boron distributions before the drive-in process (dotted line) and after ion implantation and drive-in (solid line). 68
Figure 3.10. Sheet number with respect to the shape of the piezoresistor. 69
Figure 3.11. Calculation of the sheet number of the proposed piezoresistor. 70
Figure 4.1. Ion distributions with respect to the ion implant energy. 76
Figure 4.2. Channeling effect. 77
Figure 4.3. Results of the ion implantation with respect to the tilting angle of the 〈110〉 Si wafer. 78
Figure 4.4. Normalized etching rates for silicon layers doped with boron, phosphorus, and germanium. 79
Figure 4.5. Fabrication process of the metal shadow mask 80
Figure 4.6. Alignment of the shadow mask and processing of the wafer. 81
Figure 5.1. Mask #1: Definition of the ion implantation area. 88
Figure 5.2. Mask #2: Definition of the open area of the contact electrode. 89
Figure 5.3. Mask #3: Definitions of the mass, hinge, and piezoresistive sensing bridge. 90
Figure 5.4. Mask #4: Definition of the metal patterning. 91
Figure 5.5. Image of four overlapping masks. 92
Figure 5.6. Microfabrication steps of the proposed accelerometer (A-A cross-sectional view of Fig. 3.1 a 93
Figure 5.7. Fabrication results 94
Figure 5.8. Cross-sectional view of the piezoresistive sensing bridge 95
Figure 5.9. Magnified SEM images of the hinge a) before the removal of the SiO₂ layer, and b) after the removal of the SiO₂ layer. 96
Figure 5.10. Packaging of the proposed accelerometer 97
Figure 5.11. Fabricated accelerometer and its parts 98
Figure 5.12. Direction of transverse sensitivity measurement. 99
Figure 5.13. Measurement of the transverse sensitivity 100
Figure 5.14. Packaged accelerometer for measurement of the transverse sensitivity with respect to the measurement direction 101
Figure 6.1. Shock exciter system 109
Figure 6.2. Output voltage of the fabricated accelerometer as a function of the acceleration 110
Figure 6.3. Real-time acceleration responses of the fabricated (solid lines) and reference (dotted lines) accelerometers for an input acceleration of 500 g 111
Figure 6.4. Real-time acceleration responses of the fabricated (solid lines) and reference (dotted lines) accelerometers for an input acceleration of 1,000 g 112
Figure 6.5. Real-time acceleration responses of the fabricated (solid lines) and reference (dotted lines) accelerometers for an input acceleration of 2,000 g 113
Figure 6.6. Real-time acceleration responses of the fabricated (solid lines) and reference (dotted lines) accelerometers for an input acceleration of 4,000 g 114
Figure 6.7. Real-time acceleration responses of the fabricated (solid lines) and reference (dotted lines) accelerometers for an input acceleration of 6,000 g 115
Figure 6.8. Real-time acceleration responses of the fabricated (solid lines) and reference (dotted lines) accelerometers during measurement of the transverse sensitivity using an input acceleration of 2,000 g 116
Figure 6.9. Theoretical sensitivity with respect to the direction of the applied shock 117
초록보기 더보기
Since the cantilever-type silicon accelerometer was introduced by L.M. Roylance and J.B. Angell in 1979, micromachined accelerometers have been used in various industry fields. There are several methods for sensing the acceleration of such micromachined accelerometers, including capacitive, piezoresistive, piezoelectric, resonant, and optical methods. Among these, the most commercially used methods are capacitive, piezoresistive, and piezoelectric detection. Among them, the piezoresistive detection method measures high-shock over thousands of g without additional circuit or packaging in the most stable way. The measurement of high-shock over thousands of g is highly significant in various fields such as vehicle collision test, building blast test, oil drilling, and manufacturing bomb fuses. Thus, research on the manufacture and application of high-shock piezoresistive accelerometer have been actively conducted.
In this paper, a high-shock (2,000 g) accelerometer with a plate spring is presented. The acceleration sensor comprised of the presented plate spring has merits of relatively simple manufacturing process and possibility of precisely controlling the dimension of the spring. In addition, the sensor has high structural stability because it is manufactured in a form where the plate spring surrounds the mass body of the sensor. Detailed design of the dimensions of the presented acceleration sensor was determined through an optimum design process using commercial software. Furthermore, the presented acceleration sensor was manufactured through a micro-machining process based on semiconductor process technology. The performance of the presented acceleration sensor was evaluated by measuring the sensitivity, cross-sensitivity, and over-shock survivability of the sensor.
When a shock of 2,000 g was applied, the sensitivity of the manufactured acceleration sensor was 34.6 μV/g. When a shock within 2,000 g was applied, the crosssensitivity of the acceleration sensor was measured to be 2.5% or below. The presented acceleration sensor exhibited a stability to the extent that it was not destroyed even under a shock of over 6,000 g, which was three times the sensing range, and the crosssensitivity was 15% or below the measured sensitivity. The presented acceleration sensor is expected to be applied in various fields where measurements of high-shock over thousands of g are required.
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