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title page
Abstract
Contents
I. Introduction 17
1.1. Motivation and Overview 17
1.2. Theses Outline 22
II. Gigabit-Level PON PMD Specifications and US-TX Design Challenges 24
2.1. System Overview: Ethernet Passive Optical Network [1-2] 24
2.2. Key PMD Specifications for 1.25Gb/s PON US-TX 28
2.3. US-TX Design Challenges on CMOS Process 31
III. PON Upstream Transmitter Design: Architecture & Circuit Details 34
3.1. US-TX Top Structure and Its Operation Principle 34
3.1.1. US-TX with Separated Modulation and Bias Feedback Topology 35
3.1.2. Other Alternative US-TX Topologies 38
3.1.3. US-TX: Circuits and Design Details 43
3.2. Another Approach: US-TX with Separated Burst Control and Laser Shut-down 63
3.2.1. Top Structure and Circuit Design Details 63
3.2.2. Circuit Design Details 64
IV. Experimental Results 76
4.1. Measurement Set-up and Evaluation PCB Design Considerations 76
4.2. Separated Modulation and Bias Current Feedback Topology 81
4.3. US-TX with Fast Laser Turn-on/Turn-off 89
4.4. Troubleshooting on Measurements 93
V. Conclusions 103
국문요약 105
References 111
Acknowledgement 115
Curriculum vitae 117
Research Experiences 118
International Conerences 121
Patents 123
Table 1-1. Key specifications of gigabit-level burst-mode US-TX. 19
Table 2-1. Key PMD specification of gigabit-level PON US-TX. 30
Table 3-1. Laser driving current state according to the input data and BEN signal. 39
Table 3-2. Laser driving current state according to the input data and BEN signal. 65
Table 3-3. Detailed PIN descriptions for the US-TX shown in Fig.3-18. 75
Table 4-1. Performances summary of the proposed work. 88
Table 4-2. Performance comparison of gigabit-class US-TXs. 92
Fig.1-1. Architecture of general PON system. 18
Fig.1-2. E-PON timing parameter definitions. 19
Fig.1-3. Temperature characteristics of a laser-diode as a laser output power vs. laser current. 22
Fig.2-1. PON topologies. 25
Fig.2-2. Downstream transmission in EPON. 26
Fig.2-3. Upstream transmission in EPON. 28
Fig.2-4. Burst-mode ICs in a PON system. 29
Fig.3-1. US-TX with separated feedback for bias and modulation currents control. 36
Fig.3-2. US-TX with differentially controlled laser bias and modulation currents. 40
Fig.3-3. US-TX with fast laser turn-on/turn-off. 41
Fig.3-4. Simplified laser driver schematic depicted in Fig.3-1. 43
Fig.3-5. Simplified laser driver schematic for differential US-TX topology depicted in Fig.3-2 and Fig.3-3. 44
Fig.3-6. Small-signal equivalent laser-diode model for simulation. 45
Fig.3-7. Peak detection circuits: (a) Top hold and (b) Bottom hold circuits 46
Fig.3-8. Peak detection circuit using cascode topology for fast response. 48
Fig.3-9. Typical transimpedance amplifier (TIA) configuration. 51
Fig.3-10. Common-source TIA with two source-followers for wide bandwidth. 51
Fig.3-11. Comparator circuit with linear input/output relationship. 53
Fig.3-12. Band-gap reference voltage generator for temperature independent DC biasing. 55
Fig.3-13. Band-gap reference voltage generated using PTAT current topology 56
Fig.3-14. Folded-cascode operational amplifier for high-gain. 57
Fig.3-15. Transmission gate logic switches for laser turn-on/turn-off and its turn-on resistorance (RON) as a function of input voltage VIN.(이미지참조) 58
Fig.3-16. SCR ESD structure recommended TSMC for primary protection of gate pads 60
Fig.3-17. Protection capability of SCR structure of TSMC. 62
Fig.3-18. US-TX with separated burst control and laser shutdown functions. 63
Fig.3-19. Simplified laser driver circuits with burst control function. 65
Fig.3-20. Transient waveform according to the BEN signal and input data. 66
Fig.3-21. Eye diagram from the transient result shown in Fig.3-18 when fixed modulation current (IMOD) of 80mA is applied.(이미지참조) 67
Fig.3-22. Schematic of a regulated cascode (RGC) TIA. 69
Fig.3-23. Frequency characteristic of the RGC TIA with monitoring photodiode parasitic capacitance of 20pF. 70
Fig.3-24. Comparator circuit using dummy TIA as a reference. 71
Fig.3-25. End-of-Life detection (a) principle diagram and (b) its circuit implementation 72
Fig.3-26. PAD placement for the US-TX depicted in Fig.3-18. 74
Fig.4-1. Burst-mode measurement set-up for the proposed US-TXs. 76
Fig.4-2. Application circuits as a printed circuits board for evaluating proposed US-TXs 79
Fig.4-3. Printed circuit board (PCB) for evaluation using 4-layers metal process. 80
Fig.4-4. Chip microphotograph as the US-TS shown in Fig.3-1. 81
Fig.4-5. Measured output waveforms for 1.25Gb/s burst-mode with 29-1 PRBS.(이미지참조) 82
Fig.4-6. Laser turn-on/turn-off characteristics at high temperature: (a) Laser turn-on and (b) Laser turn-off. 84
Fig.4-7. Eye diagram of one of the two bursts shown in Fig.4-5 at room temperature. 85
Fig.4-8. Eye diagrams of the proposed transmitter under two extreme temperatures 87
Fig.4-9. Chip microphotograph as the US-TS shown in Fig.3-3. 89
Fig.4-10. Measured optical waveforms for 1.25Gb/s input burst. 90
Fig.4-11. Laser turn-on/turn-off characteristics. 91
Fig.4-12. Eye diagram of 1.25Gb/s PRBS payload data. 91
Fig.4-13. DC-coupled laser driver interface. 94
Fig.4-14. AC-coupled laser driver interface. 95
Fig.4-15. Eye diagram showing waveform compression. 95
Fig.4-16. Ringing on (a) eye diagram and (b) its conventional waveform 97
Fig.4-17. Eye diagram showing overshoot. 98
Fig.4-18. Eye diagram showing undershoot. 99
Fig.4-19. Relaxation oscillation (a) eye diagram and its conventional waveform 100
Fig.4-20. Pattern dependent jitter (Double line crossing on eye diagram) 101
Fig.4-21. Asymmetric eye diagram. 102
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