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title page
Abstract
Contents
CHAPTER 1. Introduction 10
1.1/1. Carbon Nanotube 10
1.1.1/1.1. Structure and General Properties 10
1.1.2/1.2. Characterization of field emission from CNTs 14
1.2. Field emission theory 17
1.3. Back light Unit (BLU) 20
1.3.1. Basic structure of BLU 20
1.3.2. Details of side (wedge) type 23
1.3.3. Function of each component 25
Reference 29
CHAPTER 2. Experiment 31
2.1. Fabrication process of CNT paste 31
CHAPTER 3. Fabrication and characteristic of under-gated triode with CNT emitter for flat lamp 34
3.1. Introduction 34
3.2. Experiment 36
3.3. Results and Discussions 39
3.4. Conclusion 49
References 50
CHAPTER 4. Simple fabrication process of a screen-printed triode-CNT field emitter array 52
1. Introduction 52
2. Experimental 54
3. Results and discussion 57
4. Conclusions 64
References 65
초록 66
List of publications 68
Figure 1-1. Form a single-walled CNT from a graphene sheet. 12
Figure 1-2. Examples of CNTs with different (n, m) indices. 13
Figure 1-3. The typical I-V characteristic of a CNT film and its corresponding F-N plot (inset). 16
Figure 1-4. Schematic illustration of the surface potential barrier under the action of an external electric field. 19
Figure 1-5. Combination of BLU with TFT-LCD panel 20
Figure 1-6. Basic structure of BLU according to light position 22
Figure 1-7. Detail descriptions of side type BLU 24
Figure 1-8. Function and structure of diffusion film. 27
Figure 1-9. Structure and function of prism (lens) film 28
Figure 2-1. The schematic diagram of fabrication procedure of CNT past. 33
Figure 3-1. Schematic diagram of fabrication processes for under-gate type triode with CNT emitters. 38
Figure 3-2. Schematic diagram of simulation domain used in the simulation, (a) diode and (b) triode. The unit is um. 40
Figure 3-3. Simulation results of electric potential distribution and trajectories of emitted electrons near the cathode electrodes under various conditions. 42
Figure 3-4. SEM image of (a) under gate structures and (b) morphologies of CNT-emitter on a cathode electrode after surface activation using adhesive tape. 44
Figure 3-5. I-V curve for under-gate CNT field emitters under diode-type emission where the distance between the anode and cathode is maintained to be 1500㎛. 46
Figure 3-6. I-V characteristics of a under gate type triode with CNT emitters. Anode voltage is 2500V. 48
Figure 4-1. Schematic depiction of fabrication processes for triode structure with CNT emitters. 56
Figure 4-2. Plot of variation in transmission (in %) over the measured wavelength range as a function of thickness of Au layer. 59
Figure 4-3. Plot of variation in sheet resistance and maximum transmittance as a function of Au/Ti layer thickness. 60
Figure 4-4. Recorded SEM image for parallel triode structure and CNT emitters on a cathode electrode after surface activation by adhesive tape. 62
Figure 4-5. Recorded I-V characteristics in triode and diode configuration with CNT emitters.(Anode voltage is 2700V). 63
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