Title Page
ABSTRACT
국문 초록
Contents
NOMENCLATURE 15
CHAPTER 1. INTRODUCTION 16
CHAPTER 2. RESULTS AND DISCUSSION 22
2.1. PEA Process Efficiency 22
2.1.1. Comparing PEA with RTA 22
2.2. Processing Factors 26
2.2.1. Carbon Deposition Thickness 26
2.2.2. PEA Voltage 32
2.2.3. PEA Temperature 36
2.2.4. PEA Time 39
2.3. Graphene-Thin-Film/Substrate Interactions 45
CHAPTER 3. CONCLUSIONS 50
CHAPTER 4. EXPERIMENTAL METHODS 56
REFERENCES 60
Chapter 1 11
Figure 1.1. (a) A 3D modeling of the process in the 800-mm-diameter real vacuum chamber. Major components include sputtering guns, internal ICP... 19
Figure 1.2. The 3D model showing that the electrons present in the ICP in the vacuum chamber are pulled toward the substrate by a positive voltage pulse... 20
Figure 1.3. Photographic image of the inside of the vacuum chamber during actual PEA. An electrical floating-state shield at the rim prevents feedthrough... 21
Chapter 2 12
Figure 2.1.1.1. Raman spectra of the as-deposition carbon layer, and films prepared by the RTA and PEA processes. 24
Figure 2.1.1.2. Sheet resistances of substrates prepared using the RTA and PEA processes. Each sample was treated at a process temperature of 400 ℃ for 20... 25
Figure 2.2.1.1. Sheet resistance and resistivity as functions of carbon thin-film deposition thickness. All were substrates subjected to PEA by applying a pulsed... 28
Figure 2.2.1.2. Thin-film thickness (calculated assuming that the resistivity of the graphene thin film is 2 kΩ·cm) as a function of the actual thickness of the... 29
Figure 2.2.1.3. ID/IG and sheet resistance as functions of carbon thin-film thickness. Sheet resistance decreases and then plateaus with increasing film...[이미지참조] 30
Figure 2.2.1.4. Raman spectra as functions of carbon thin-film thickness. 31
Figure 2.2.2.1. Resistivities as functions of PEA voltage. 34
Figure 2.2.2.2. Raman spectra as functions of PEA voltage. 35
Figure 2.2.3.1. Resistivities as functions of PEA temperature. 37
Figure 2.2.3.2. Raman spectra as functions of PEA temperature. 38
Figure 2.2.4.1. Resistivities as functions of PEA time. 41
Figure 2.2.4.2. Raman spectra as functions of PEA time. 42
Figure 2.2.4.3. Schematic diagram showing the RF-ICP and substrate-biasing pulse configuration used in the PEA process developed in this study. 43
Figure 2.2.4.4. Sheet resistances obtained using the pulse configuration introduced in this study. 44
Figure 2.3.1. AES depth-profiling data for a SiO₂ wafer sample processed under the same conditions as in Figure 2.3.3., which shows an average oxygen content... 47
Figure 2.3.2. AES depth-profiling data for a Si wafer sample processed under the same conditions as in Figure 2.3.1. and Figure 2.3.3., which shows an... 48
Figure 2.3.3. XPS depth-profiling data for a sample prepared by depositing a 30-nm-thick carbon thin film on a SiO₂ wafer substrate and subjecting it to PEA... 49
Chapter 3 14
Figure 3.1. Analyzing the best samples prepared at process temperatures of 400 ℃. The optimized sample prepared at 400 ℃ exhibited a resistivity of 8.36... 52
Figure 3.2. Analyzing the best samples prepared at process temperatures of 600 ℃. The optimized sample prepared at 600 ℃ exhibited a resistivity of 1.56... 54