Title Page
Contents
ABSTRACT 14
CHAPTER 1. INTRODUCTION 16
CHAPTER 2. VT ROLL-OFF AND DRAIN INDUCED BARRIER LOWERING (DIBL) IN TOP GATE SELF-ALIGNED INGAZNO TFTS[이미지참조] 18
2.1. Device Information 18
2.2. Analysis Methods 22
2.3. VT roll-off in InGaZnO TFTs[이미지참조] 28
2.4. Drain Induced Barrier Lowering in IGZO TFTs 29
CHAPTER 3. HOT CARRIER EFFECTS IN BOTTOM GATE INGAZNO TFTS 35
3.1. Device Information 35
3.2. Hot carrier effects in InGaZnO TFTs 38
CHAPTER 4. CONCLUSION 41
국문 요약 43
REFERENCES 45
CURRICULUM VITAE 50
TABLE 1. Extracted DOS parameter 24
TABLE 2. Extracted n-profile parameter 27
Figure 1. (a) Cross-sectional schematic of the fabricated TG-SA coplanar a-IGZO... 19
Figure 2. (a) VT according to channel length extracted from O-poor, O-mid, and...[이미지참조] 21
Figure 3. (a) Experimentally extracted the DOS distributions of three devices... 22
Figure 4. (a) VT according to channel length extracted experimentally and VT...[이미지참조] 28
Figure 5. (a) Doping profile of three devices at channel length (6 μm). (b)... 30
Figure 6. (a) Schematic plot showing the change in doping concentration according... 33
Figure 7. (a) Transfer characteristics of O-poor and O-rich devices (b) Output... 37
Figure 8. VT shift results after various stress biases: (a) O-poor device...[이미지참조] 39
Figure 9. Extracted DOS distributions before and after the stress: (a) The DOS... 40