Silicon Carbide-based devices are being proposed to replace conventional silicon based devices based on their physical properties, and have become an active research topic. Several studies havereported a high breakdown voltage in SiC powered devices in the implanted limited field ring structure. However, the problems ionimplanted edge termination field limited rings appear to be associated with the ion implantation process, such as damage to grid and leakage current increases due to ion implantation.
In this paper, the production of SiC SBD Floating Metal Ring(FMR) edge termination structures apply on matter whether we are using ion implantation and to proceed with the breakdown voltage compared. The experimental method to produce SiC SBD after FMR structural design through simulation was performed with a comparative analysis of the breakdown voltage No-FMR and FMR. We measured the breakdown voltage of the fabricated No-FMR and FMR, the result, confirmed that FMR SiC SBD is approximately 35% higher than the breakdown voltage No-FMR. It was confirmed that the breakdown voltage increases due to the balancing effect of the electric field structure of FMR.