표제지
요약
목차
I. 서론 10
1.1. 연구 배경 10
1.2. 연구 동향 및 필요성 11
II. 이론적 배경 16
2.1. PCB 제조공정 16
2.2. 레이저 가공원리 18
III. 열해석 25
3.1. 수치적 열해석 25
3.2. 유한요소 해석 27
3.2.1. 단일펄스에 따른 온도분포 28
IV. 실험 37
4.1. 빌드업 필름(Build-up films) 37
4.2. 실험장치 42
4.3. 실험방법 45
4.4. 실험결과 및 분석 46
4.4.1. 피코초(pico second)레이저 가공 결과 46
4.4.2. 나노초(nano second)레이저 가공 결과 52
V. 결론 65
참고문헌 67
Abstract 73
Table 4-1. Characteristics of the laser sources used in this experimental 44
Table 4-2. Properties for experimental sample 44
Table 4-3. Conditions for laser processing of trench pattern using ps laser 47
Table 4-4. Single pulse ablation depth and energy density (fluence) for three types of materials 57
Table 4-5. Conditions for laser processing of trench pattern using ns laser 59
Fig. 1.1. Electronic devices to apply the IC substrates 11
Fig. 1.2. Structure for IC substrate 11
Fig. 1.3. IC substrates trend 13
Fig. 2.1. Semi-Additive Process(SAP) method for manufacturing circuit 16
Fig. 2.2. Difference for adherend of plating circuit between conventional circuit and embedded pattern 17
Fig. 2.3. Method for forming embedded pattern with laser processing 18
Fig. 2.4. Processing method with laser intensity 19
Fig. 2.5. Embedded method for manufacturing circuit 20
Fig. 2.6. Determination of pulse duration and meaning of FWHM (Full Width at Half Maximum) 20
Fig. 2.7. Characteristics of Gaussian beam 21
Fig. 2.8 Laser intensity distribution to distance of TEM00 mode(이미지참조) 22
Fig. 3.1. A finite element model for thermal analysis 28
Fig. 3.2. Result for simulation of laser beam with 1pulse 29
Fig. 3.3. Distribution of heat flux for beam spot of irradiated sample 29
Fig. 3.4. Temperature distribution according to laser power 30
Fig. 3.5. Result for threshold laser power 31
Fig. 3.6. Result for irradiated sample with transient thermal analysis 31
Fig. 3.7. Temperature change of 1pulse for time according to laser power 32
Fig. 3.8. Result for cooling effect of 1pulse for time according to laser power 32
Fig. 3.9. Results for overlap rate in 0.18W of laser power 33
Fig. 3.10. Results for overlap rate in 0.15W of laser power 33
Fig. 3.11. Results for overlap rate in 0.12W of laser power 34
Fig. 3.12. Results for overlap rate in 0.1W of laser power 34
Fig. 3.13. Results for overlap rate in 0.08W of laser power 35
Fig. 3.14. Results for overlap rate of 70% according to laser power 35
Fig. 4.1. Problem for build-up films with baking 37
Fig. 4.2. Influence on Coefficient of Thermal Expansion(CTE) with SiO₂ content 38
Fig. 4.3. Influence on glass transition temperature(Tg) with Coefficient of Thermal Expansion(CTE) 38
Fig. 4.4. Problem for laser trench process 39
Fig. 4.5. Large filler caused by laser trench process 40
Fig. 4.6. Threshold fluence ranges for ablation of most metals, ceramics and polymers 41
Fig. 4.7. Reflectance of SiO₂ following wavelength 41
Fig. 4.8. Schematic diagram of laser system 41
Fig. 4.9. Experimental device for process of trench pattern 43
Fig. 4.10. Experimental samples for laser processing 44
Fig. 4.11. Sample with new structure to compose primer film layer of 10μm 45
Fig. 4.12. Goal of experimental for trench pattern process 46
Fig. 4.13. Microscopic and SEM image of sample A for trench pattern using ps laser 47
Fig. 4.14. SEM and depth profile data of the A sample 48
Fig. 4.15. SEM image of sample B for trench pattern using ps laser 49
Fig. 4.16. Depth and width profile data of sample B 49
Fig. 4.17. SEM image of sample C for trench pattern using ps laser 50
Fig. 4.18. Depth and width profile data of sample C 50
Fig. 4.19. SEM image of sample D for trench pattern using ps laser 51
Fig. 4.20. Depth and width profile data of sample D 51
Fig. 4.21. Determination of energy density caused by threshold pulse energy for sample B 53
Fig. 4.22. Determination of energy density caused by threshold pulse energy for sample C 54
Fig. 4.23. Determination of energy density caused by threshold pulse energy for sample D 55
Fig. 4.24. EDX analysis for processed surface 56
Fig. 4.25. Difference between pulse and CW laser 57
Fig. 4.26. Results for overlap rate of pulse laser 58
Fig. 4.27. Comparison for result experimental and simulation data 60
Fig. 4.28. SEM for trench pattern of sample B 61
Fig. 4.29. Depth and width profile data of sample B with CLSM 61
Fig. 4.30. SEM for trench pattern of sample C 62
Fig. 4.31. Depth and width profile data of sample C with CLSM 62
Fig. 4.32. SEM for trench pattern of sample D 63
Fig. 4.33. Depth and width profile data of sample D with CLSM 63
Fig. 4.34. Result for laser processing sample with new structure to compose primer film layer of 10μm 64